IXTK75N30 IXYS, IXTK75N30 Datasheet

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IXTK75N30

Manufacturer Part Number
IXTK75N30
Description
MOSFET N-CH 300V 75A TO-264
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTK75N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.042 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
75
Rds(on), Max, Tj=25°c, (?)
0.045
Ciss, Typ, (pf)
6000
Qg, Typ, (nc)
240
Trr, Typ, (ns)
360
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
High Current
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C unless otherwise specified)
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 ms, duty cycle d 2%
T
T
S
C
J
J
C
C
C
J
GS
GS
C
C
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= ±20 V DC, V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
GS
DSS
, di/dt
, I
TM
D
D
= 1 mA
D
= 250 A
= 0.5 I
G
FET
100 A/ s, V
= 2
DS
D25
= 0
GS
= 1.0 M
DD
T
T
Advance Technical Information
J
J
V
= 25°C
= 125°C
DSS
JM
300
IXTK 75N30
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum ratings
0.7/6
±20
±30
300
300
300
540
150
300
2.5
75
75
60
10
5
±100
4.0
50
42 m
Nm/lb.in.
Max.
2 mA
V/ns
mJ
nA
W
V
C
C
C
C
A
A
A
V
A
g
J
V
V
V
V
TO-264 AA (IXTK)
G = Gate
S = Source
Features
Applications
Advantages
V
I
R
Low R
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Motor controls
DC choppers
Switched-mode power supplies
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 300
=
=
D
Tab = Drain
TM
75
42 m
= Drain
process
DS99012(03/03)
V
A
D (TAB)

Related parts for IXTK75N30

IXTK75N30 Summary of contents

Page 1

... ± GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 ms, duty cycle d 2% © 2003 IXYS All rights reserved Advance Technical Information IXTK 75N30 Maximum ratings 300 = 1.0 M 300 ±20 ±30 75 300 2 DSS 540 -55 ... +150 150 -55 ... +150 300 0.7/6 10 Characteristic Values Min ...

Page 2

... S GS Pulse test, t 300 µs, duty cycle 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic values Min. Typ. Max 6000 1010 400 ...

Page 3

... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs 2 Amperes D © 2003 IXYS All rights reserved 6V 5V 2 D25 25º 25º IXTK 75N30 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I Value vs. DS(on) D25 ...

Page 4

... C iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXTK 75N30 Fig ...

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