IXFV12N120P IXYS, IXFV12N120P Datasheet

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IXFV12N120P

Manufacturer Part Number
IXFV12N120P
Description
MOSFET N-CH 1200V 12A PLUS220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFV12N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.35 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
543W
Mounting Type
Through Hole
Package / Case
PLUS-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.35 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
543 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.35
Ciss, Typ, (pf)
6500
Qg, Typ, (nc)
103
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
543
Rthjc, Max, (ºc/w)
0.230
Package Style
PLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
Mounting force (PLUS 220)
TO-247
PLUS 220 types
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 1mA
= 1mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFH12N120P
IXFV12N120P
IXFV12N120PS
11..65 / 2.5..14.6
1200
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1.13/10
1200
1200
± 30
± 40
500
543
150
300
260
Typ.
1.15
12
30
15
6
6
4
± 100
1.35
Max.
Nm/lb.in.
6.5
25
2 mA
N/lb.
V/ns
mJ
nA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
Features
Advantages
V
I
R
t
PLUS220 (IXFV)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
Applications:
G = Gate
S = Source
D25
rr
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
High Voltage Switched-mode and
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
High Voltage DC-DC converters
High Voltage DC-AC inverters
resonant-mode power supplies
Generators
DS(on)
DSS
G
D
G
= 1200V
= 12A
≤ ≤ ≤ ≤ ≤ 1.35Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
S
S
D
TAB = Drain
= Drain
D (TAB)
D (TAB)
D (TAB)
DS99894A (04/08)

Related parts for IXFV12N120P

IXFV12N120P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXFH12N120P IXFV12N120P IXFV12N120PS Maximum Ratings 1200 = 1MΩ 1200 GS ± 30 ± 500 ≤ 150° 543 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65 / 2.5..14 Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 41 0.21 Characteristic Values Min. Typ. JM 0.5 6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH12N120P IXFV12N120P IXFV12N120PS PLUS220 (IXFV) Outline Max Ω 0.23 °C/W °C/W Max TO-247 (IXFH) Outline 1.5 V 300 ns μC ...

Page 3

... Value 125º 25º IXFH12N120P IXFV12N120P IXFV12N120PS Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 12A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - ...

Page 4

... MHz Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 6.0 6.5 7.0 7 25ºC J 0.9 1.0 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. IXFH12N120P IXFV12N120P IXFV12N120PS Fig. 8. Transconductance 40º Amperes D Fig. 10. Gate Charge 600V 10mA ...

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