IXFX32N50Q IXYS, IXFX32N50Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFX32N50Q
Manufacturer Part Number
IXFX32N50Q
Description
MOSFET N-CH 500V 32A PLUS247
Specifications of IXFX32N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3950pF @ 25V
Power - Max
416W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
416 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
3950
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
© 2004 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
N-Channel Enhancement Mode
Avalanche Rated, Low Q
DM
D25
AR
GSS
DSS
JM
L
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
AS
D
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Note 1
S
C
C
C
C
J
C
GS
GS
GS
GS
J
J
DS
DS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C,
pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 uA
= 4 mA
, V
= 0.5 I
G
= 2 Ω
DS
g
, High dv/dt
= 0
D25
GS
= 1 MΩ
DD
JM
(T
T
T
≤ V
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
,
IXFK 32N50Q
IXFX 32N50Q
500
min.
2.5
-55 ... + 150
-55 ... + 150
Characteristic Values
1.13/10
Maximum Ratings
typ.
1500
±20
±30
120
150
300
500
500
416
32
32
45
6
4
5
±100
0.16
100
max.
Nm/lb.in.
4.5
1
V/ns
mJ
mJ
°C
°C
°C
°C
mA
W
nA
µA
V
V
V
V
A
A
A
g
g
V
V
Ω
PLUS 247
(IXFX)
500 V 32 A 0.16 Ω Ω Ω Ω Ω
500 V 32 A 0.16 Ω Ω Ω Ω Ω
TO-264 AA (IXFK)
G = Gate
S = Source
Features
Advantages
t
V
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
PLUS 247
mounting
Space savings
High power density
DSS
≤ ≤ ≤ ≤ ≤ 250 ns
DS (on)
G
TM
D
TM
G
I
package for clip or spring
D25
D
S
D = Drain
TAB = Drain
g
DS98604E(01/04)
process
R
DS(on)
(TAB)
(TAB)
Related parts for IXFX32N50Q
IXFX32N50Q Summary of contents
... GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 Note 1 © 2004 IXYS All rights reserved IXFK 32N50Q IXFX 32N50Q Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 32 120 1500 ≤ DSS 416 -55 ... + 150 150 -55 ... + 150 300 1.13/ Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... A/µ Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... V - Volts DS Figure 3. R normalized to 15A/25 DS(on) 2 10V GS 2.4 0 Tj=125 C 2.0 1.6 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature -50 - Degrees C C © 2004 IXYS All rights reserved vs Tj= 100 125 150 IXFK 32N50Q IXFX 32N50Q Figure 2. Output Characteristics at 125 125 Volts DS Figure 4. R ...
... Volts SD Figure 10. Transient Thermal Resistance 0.40 0.20 0.10 0.08 0.06 0.04 0.02 0. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 200 250 1.0 1.2 ...
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