IXFX73N30Q IXYS, IXFX73N30Q Datasheet - Page 4

• Manufacturer Part Number: IXFX73N30Q
• Description: MOSFET N-CH 300V 73A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX73N30Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 73 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 73
• Rds(on), Max, Tj=25°c, (?): 0.042
• Ciss, Typ, (pf): 6400
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
1 00
1 50
1 20
1 80
1 50
1 20
90
60
30
90
60
30
0
0
3.5
0.4
Fig. 9. Source Current vs. Source-To-Drain
0
Fig. 7. Input Adm ittance
T
4
J
= 1 25ºC
0.6
Fig. 11. Capacitance
T
J
1 0
= -40ºC
4.5
1 25ºC
25ºC
C
C
C
V
V
iss
oss
rss
V
0.8
GS
SD
DS
5
Voltage
- Volts
- Volts
20
- Volts
5.5
T
J
1
= 25ºC
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
f = 1 M hz
6
30
1 .2
6.5
40
1 .4
7
1 20
1 00
0.01
80
60
40
20
0.1
1 0
0
8
6
4
2
0
1
0
0
1
Fig. 12. Maxim um Transient Therm al
T
J
= -40ºC
V
I
I
1 25ºC
30
D
G
25ºC
Fig. 8. Transconductance
DS
= 36.5A
= 1 0mA
Pulse Width - milliseconds
= 1 25V
Fig. 10. Gate Charge
50
Q
60
G
1 0
Resistance
I
- nanoCoulombs
D
- Amperes
90
1 00
1 20
IXFK 73N30Q
IXFX 73N30Q
1 00
1 50
6,534,343
1 50
1 80
200
21 0
1 000