IXFT80N15Q IXYS, IXFT80N15Q Datasheet
IXFT80N15Q
Manufacturer Part Number
IXFT80N15Q
Description
MOSFET N-CH 150V 80A TO-268
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH80N15Q.pdf
(2 pages)
Specifications of IXFT80N15Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0225 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.0225
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT80N15Q
Manufacturer:
IXYS
Quantity:
15 500
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Preliminary data sheet
© 2000 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
DSS
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
C
C
C
C
C
C
J
J
J
GS
GS
GS
GS
DS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
DC
D
= 250 uA
= 4 mA
, V
= 0.5 • I
G
= 2 W
DS
= 0
D25
GS
= 1 MW
DD
T
T
(T
£ V
J
J
J
= 25°C
= 125°C
g
= 25°C, unless otherwise specified)
DSS
TO-247
TO-264
TO-247
TO-264
TO-268
,
JM
IXFH 80N15Q
IXFK 80N15Q
IXFT 80N15Q
min.
150
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
0.9/6 Nm/lb.in.
150
150
±20
±30
320
360
150
300
1.5
80
80
45
10
5
6
4
max.
±100
22.5 m W
4.0
25
1 mA
V/ns
mJ
°C
°C
°C
°C
nA
mA
W
V
V
V
V
A
A
A
g
g
g
V
V
J
TO-264 AA (IXFK)
G = Gate
S = Source
Features
l
l
l
l
l
l
l
Advantages
l
l
l
Low gate charge
International standard packages
classification
Low R
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
G
G
HDMOS
= 150
=
= 22.5 mW
£ 200 ns
D
S
S
TAB = Drain
80
TM
98725 (05/31/00)
process
V
A
D (TAB)
(TAB)
(TAB)
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IXFT80N15Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ © 2000 IXYS All rights reserved IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q g Maximum Ratings 150 = 1 MW 150 GS ±20 ±30 80 320 1.5 £ DSS 360 -55 ... +150 150 -55 ... +150 ...
Page 2
... thJC R TO-247 thCK TO-264 £ IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 35 50 D25 4500 1400 680 0.5 • DSS D D25 68 20 180 , I = 0.5 • I ...