IXKC25N80C IXYS, IXKC25N80C Datasheet
IXKC25N80C
Manufacturer Part Number
IXKC25N80C
Description
MOSFET N-CH 800V 25A ISOPLUS220
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKC25N80C.pdf
(4 pages)
Specifications of IXKC25N80C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 2mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4600pF @ 25V
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
25
Rds(on), Max, Tj=25°c, (?)
0.150
Ciss, Typ, (pf)
4600
Qg, Typ, (nc)
180
Trr, Max, (ns)
-
Trr, Typ, (ns)
550
Pd, (w)
140
Rthjc, Max, (k/w)
0.50
Visol, Rms, (v)
2500
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
CoolMOS
ISOPLUS
N-Channel Enhancement Mode
Low R
Electrically Isolated Back Surface
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
E
E
dV/dt
Symbol
R
V
I
I
C
C
C
Q
Q
Q
t
t
t
t
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
DSS
AS
AR
DSon
iss
oss
rss
thJC
g
gs
gd
DSon
, high V
Conditions
T
T
T
T
T
V
d
Conditions
V
V
V
V
V
V
V
I
D
IR
VJ
C
C
J start
J start
GS
DS
DS
GS
GS
GS
GS
DS
= 35 A; R
= 25°C
= 90°C
/dt = 100 A/µs
= 25°C
= V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 10 V; V
< V
= 25°C; single pulse; I
= 25°C; repetitive; I
DSS
GS
DSS
TM
™ 1)
; I
; V
DSS
; I
D
DS
G
F
D
= 2 mA
GS
DS
Package
= 2.2 Ω
= 35 A; T
= I
= 25 V; f = 1 MHz
MOSFET
DS
= 0 V
= 640 V; T
Power MOSFET
D90
= 0 V
DS
= 640 V; I
VJ
= 150°C
D
VJ
= 17 A
T
T
D
= 125°C
VJ
VJ
= 3.4 A
D
(T
= 25°C
= 125°C
= I
VJ
D90
= 25°C, unless otherwise specifi ed)
min.
2
Characteristic Values
4600
2500
Maximum Ratings
typ.
135
250
120
180
20
80
25
25
75
10
G
max.
±200
± 20
800
670
150
0.5
0.5
25
18
50
6
4
S
V/ns
D
K/W
mΩ
mJ
mJ
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
A
V
I
V
R
ISOPLUS220
Features
• Silicon chip on Direct-Copper-Bond
• 3
• Low thermal resistance due to
• Low drain to tab capacitance (<30 pF)
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
Advantages
• Easy assembly: no screws or isolation
• Space savings
• High power density
D25
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
reduced chip thickness
foils required
DSS
DS(on) max
rd
inductive switching (UIS)
E72873
generation CoolMOS
1)
G
CoolMOS
Infi neon Technologies AG.
D
S
IXKC 25N80C
= 25
= 800
= 150 mΩ
™
is a trademark of
™ 1)
A
V
power
back surface
20080526a
isolated
1 - 4
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IXKC25N80C Summary of contents
Page 1
... 640 2.2 Ω d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved G Maximum Ratings 800 ± 3.4 A 670 0 150°C Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. ...
Page 2
... Conditions R with heatsink compound thCH Weight TM ISOPLUS220 Outline IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specifi ed) VJ min. typ. max. 34 1.0 1.2 550 = 400 100 Maximum Ratings -55 ...
Page 3
... 25°C (98 150°C (98 0.4 0.8 1.2 1.6 2 2.4 2.8 V [V] SD Fig. 7 Forward Characteristics of Body Diode IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 140 T = 25°C J 130 μs p 120 110 100 ...
Page 4
... T [°C] J Fig. 10 Typ. Avalanche Energy IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 980 960 940 920 900 880 860 840 820 800 780 760 740 720 ...