IXFR40N50Q2 IXYS, IXFR40N50Q2 Datasheet

MOSFET N-CH 500V 29A ISOPLUS247

IXFR40N50Q2

Manufacturer Part Number
IXFR40N50Q2
Description
MOSFET N-CH 500V 29A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFR40N50Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
320W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
28 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
29 A
Power Dissipation
320 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
29
Rds(on), Max, Tj=25°c, (?)
0.17
Ciss, Typ, (pf)
4850
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
320
Rthjc, Max, (ºc/w)
0.39
Package Style
ISOPLUS247™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q2467741A
HiPerFET
Power MOSFETs
Preliminary Data Sheet
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2004 IXYS All rights reserved
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
F
Weight
Low R
GSS
D25
DM
AR
DSS
J
JM
stg
L
C
GS(th)
DGR
GS
AR
D
DSS
DS(on)
DSS
GSM
AS
g
, High dv/dt, Low t
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting force
S
DS
GS
J
J
C
C
C
C
C
J
C
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
TM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 4 mA
= 250 µA
, V
= I
G
= 2 Ω
T
DS
rr
g
= 0
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
IXFR40N50Q2
min.
500
2.5
Characteristic Values
-55 ... +150
-55 ... +150
22...130/5...30
Maximum Ratings
typ.
500
500
±30
±40
160
320
150
300
2.5
29
40
50
20
5
max.
±200
0.17
5.0
25
1
N/lb.
V/ns
mA
mJ
nA
µA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
G = Gate
S = Source
Features
Applications
Advantages
Double metal process for low gate
International standard packages
classification
Low R
Avalanche energy and current rated
Fast intrinsic rectifier
Pulse generation
Laser drivers
resistance
Epoxy meet UL 94 V-0, flammability
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Easy to mount
Space savings
High power density
V
I
R
t
ISOPLUS247 (IXFR)
G
D25
rr
DSS
DS(on)
D
≤ ≤ ≤ ≤ ≤ 250 ns
DS (on)
S
E153432
, low Q
=
=
= 0.17 Ω Ω Ω Ω Ω
g
D = Drain
TAB = Isolated
DS99075B(05/04)
500 V
29 A
(TAB)

Related parts for IXFR40N50Q2

IXFR40N50Q2 Summary of contents

Page 1

... GSS DSS DS DSS DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFR40N50Q2 Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 29 160 2.5 ≤ DSS 320 -55 ... +150 150 -55 ... +150 300 22...130/5...30 5 Characteristic Values (T = 25° ...

Page 2

... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 40 160 JM 1.5 250 1 = 100 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 IXFR40N50Q2 ISOPLUS247 Outline K/W K/W TO-264 AA Outline µC A 5,381,025 6,404,065B1 6,162,665 6,534,343 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344 ...

Page 3

... C 3.1 2.8 6V 2.5 2.2 5.5V 1.9 1.6 5V 1.3 4.5V 0.7 0 125º 25º 100 IXFR40N50Q2 Fig. 2. Extended Output Characteristics º 10V Volts D S Fig Norm alized to 0.5 I DS(on ) Value vs. Junction Tem perature V = 10V 40A -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case ...

Page 4

... T = 25º 0.9 1 1.1 1.2 1000 100 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 IXFR40N50Q2 Fig. 8. Transconductance T = -40ºC J 25ºC 125º Amperes D Fig. 10. Gate Charge V = 250V 20A 10mA nanoCoulombs G Fig. 12. Forw ar d-Bias Safe Ope rating Are a ...

Page 5

... © 2004 IXYS All rights reserved millis IXFR40N50Q2 ...

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