IXFB170N30P IXYS, IXFB170N30P Datasheet

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IXFB170N30P

Manufacturer Part Number
IXFB170N30P
Description
MOSFET N-CH TO-264
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFB170N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
258nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
PLUS264™
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
170
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
20
Qg, Typ, (nc)
258
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.10
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
Leads Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
V
V
V
V
V
V
Test Conditions
S
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXFB170N30P
300
30..120/6.7..27
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1250
300
300
±20
±30
170
500
150
300
260
75
85
20
10
5
Max.
±200
4.5
1.5
25
18
V/ns
N/lb.
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
J
V
I
R
t
PLUS264
Features
• Fast intrinsic diode
• Avalanche Rated
• Unclamped Inductive Switching (UIS)
• Very low R
• Low R
• Low package inductance
Advantages
• Low gate charge results in simple
• Improved Gate, Avalanche and
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
G = Gate
S = Source
D25
rr
rated
dissipation
power supplies
applications
DS(on)
drive requirement
dynamic dv/dt ruggedness
DSS
G
D
DS(ON)
S
TM
= 300V
= 170A
≤ ≤ ≤ ≤ ≤ 18mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
(IXFB)
th
and Q
results high power
D
TAB = Drain
G
= Drain
DS100000(06/08)
(TAB)

Related parts for IXFB170N30P

IXFB170N30P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFB170N30P Maximum Ratings 300 = 1MΩ 300 GS ±20 ±30 170 75 500 ≤ 150° 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 Characteristic Values Min ...

Page 2

... I 82 DSS D D25 78 0.13 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 1.85 21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB170N30P PLUS264 TM (IXFB) Outline Max °C/W 0.10 °C/W Max. 170 A 500 A 1.3 V 200 ns μC ...

Page 3

... V = 10V GS 8V 2.8 7V 2.4 6V 2.0 1.6 1.2 5V 0.8 0 85A Value 125º 25º 200 250 300 -50 IXFB170N30P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 170A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 125ºC J 25ºC - 40ºC 5.0 5.5 6.0 6 25ºC J 0.9 1.0 1.1 1.2 1.3 1.4 1,000.0 C iss 100.0 C oss C rss IXFB170N30P Fig. 8. Transconductance 200 180 160 140 120 100 100 120 I - Amperes D Fig. 10. Gate Charge 150V DS 9 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 12. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXFB170N30P 0.1 1 IXYS REF: F_170N30P(9S) 06-24-08 10 ...

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