IXTK33N50 IXYS, IXTK33N50 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTK33N50
Manufacturer Part Number
IXTK33N50
Description
MOSFET N-CH 500V 33A TO-264
Specifications of IXTK33N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
4900pF @ 25V
Power - Max
416W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
33 A
Power Dissipation
416 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
33
Rds(on), Max, Tj=25°c, (?)
0.17
Ciss, Typ, (pf)
4900
Qg, Typ, (nc)
250
Trr, Typ, (ns)
850
Pd, (w)
416
Rthjc, Max, (k/w)
0.3
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
High Current
MegaMOS
N-Channel Enhancement Mode
Preliminary data
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
(T
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
D25
DM
GSS
DSS
GS
GSM
J
JM
stg
DSS
DGR
D
DSS
GS(th)
DS(on)
d
J
= 25°C unless otherwise specified)
Test conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
BV
V
V
V
V
V
V
J
J
C
C
C
GS
DS
GS(th)
GS
DS
GS
GS
DSS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 0 V, I
= V
= 20 V DC, V
= 0.8 V
= 0 V
= 10 V, I
temperature coefficient
temperature coefficient
GS
TM
,
I
D
D
DSS
= 5 mA
= 250 A
D
FET
= 0.5 I
DS
D25
= 0
GS
= 1.0 M
T
T
J
J
= 25°C
= 125°C
JM
Min.
500
Characteristic Values
2.0
-55 ... +150
-55 ... +150
IXTK 33N50
Maximum ratings
1.13/10 Nm/lb.in.
0.087
Typ.
-0.25
500
500
±20
±30
132
416
150
300
33
10
Max.
0.17
100
200
4.0
3 mA
%/K
%/K
°C
°C
°C
W
C
nA
V
V
V
V
A
A
g
A
V
V
V
I
R
TO-264 AA
G = Gate
S = Source
Features
• Low R
• Rugged polysilicon gate cell
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Uninterruptable Power Supplies
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
• Space savings
• High power density
D (cont)
structure
(UPS)
(isolated mounting screw hole)
DSS
DS(on)
G
D
DS (on)
S
= 500 V
= 33 A
= 0.17
HDMOS
D = Drain
TAB = Drain
TM
process
95513C (4/97)
D (TAB)
1 - 4
Related parts for IXTK33N50
IXTK33N50 Summary of contents
... 0.8 V DSS DS DSS 0.5 I DS(on D25 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTK 33N50 Maximum ratings 500 = 1.0 M 500 ±20 ±30 33 132 JM 416 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 10 300 Characteristic Values Min ...
... I 30 DSS D D25 115 0.15 Ratings and Characteristics (T = 25°C unless otherwise specified) J Min. Typ. Max 100 V 850 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTK 33N50 TO-264 AA Outline Max Dim ...
... T = 25°C J 1.2 1.0 0 Amperes D Figure 3. R normalized to 16.5A/25 DS(on -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved Figure 2. Output Characteristics at 125 5.5 V 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 vs. I Figure ...
... 0.4 0.6 0 Volts SD Figure 9. Source Current vs. Source-to- Drain Voltage 1.00 0.10 0.01 0.001 Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 200 250 300 25° 1.0 1.2 Single Pulse 0.01 0.1 Pulse Width - Seconds IXTK 33N50 4500 4000 C ...
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