IXFB210N20P IXYS, IXFB210N20P Datasheet

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IXFB210N20P

Manufacturer Part Number
IXFB210N20P
Description
MOSFET N-CH 200V 210A PLUS264
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFB210N20P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
210A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
255nC @ 10V
Input Capacitance (ciss) @ Vds
18600pF @ 25V
Power - Max
1500W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
210
Rds(on), Max, Tj=25°c, (?)
0.0105
Ciss, Typ, (pf)
18.6
Qg, Typ, (nc)
255
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1500
Rthjc, Max, (ºc/w)
0.1
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
TM
HiPerFET
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 175°C
, Note 1
= 1MΩ
T
J
= 150°C
JM
IXFB210N20P
Characteristic Values
200
30..120/6.7..27
Min.
2.5
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
1500
200
200
±20
±30
210
160
600
105
175
300
260
20
10
4
Max.
±200
10.5
4.5
25
2
V/ns
N/lb.
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
g
J
V
I
R
t
PLUS264
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
Applications
Low Package Inductance
Low R
Fast Intrinsic Diode
Easy to Mount
Space Savings
High Power Density
DC-DC Coverters
Battery Chargers
Uninterrupted Power Supplies
High Speed Power Switching
Avalanche Rated
High Current Handling Capability
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC and DC Motor Drives
DS(on)
DSS
G
D
S
DS(ON)
TM
= 200V
= 210A
≤ ≤ ≤ ≤ ≤ 10.5mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200ns
and Q
D
Tab = Drain
G
= Drain
Tab
DS100018A(05/10)

Related parts for IXFB210N20P

IXFB210N20P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXFB210N20P Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 210 160 600 JM 105 4 ≤ 175° 1500 -55 ... +175 175 -55 ... +175 300 260 30..120/6.7..27 10 Characteristic Values Min ...

Page 2

... DSS D D25 18 255 , I = 0.5 • DSS D D25 83 0.13 Characteristic Values Min. Typ. JM 1.34 18 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB210N20P PLUS264 (IXFB) Outline TM Max °C/W 0.10 °C/W Max. 210 A 800 A 1.3 V 200 ns μC A 6,404,065 B1 6,683,344 ...

Page 3

... Value vs. D 180 160 T = 175ºC J 140 120 100 25º 200 250 300 350 IXFB210N20P Fig. 2. Extended Output Characteristics @ 15V GS 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V -50 - Degrees Centigrade J Fig ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 150ºC 25ºC - 40ºC 5.0 5.5 6.0 6 25ºC J 0.9 1.0 1.1 1.2 1.3 1.4 C isss C oss C rss IXFB210N20P Fig. 8. Transconductance 180 40ºC J 160 140 120 100 100 I - Amperes D Fig. 10. Gate Charge ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFB210N20P 1 10 IXYS REF: F_210N20P(9S) 5-25-10-A ...

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