IXFT80N085 IXYS, IXFT80N085 Datasheet
IXFT80N085
Manufacturer Part Number
IXFT80N085
Description
MOSFET N-CH 85V 80A TO-268
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH80N085.pdf
(2 pages)
Specifications of IXFT80N085
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.009
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFT80N085
Manufacturer:
IXYS
Quantity:
15 500
HiPerFET
Power MOSFETs
Symbol
V
V
I
I
R
© 2000 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
DSS
D25
L(RMS)
DM
AR
GSS
J
JM
stg
L
DSS
GS(th)
DGR
AR
AS
D
DS(on)
DSS
GS
GSM
d
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Test Conditions
T
T
Continuous
Transient
T
Lead current limit
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 4 mA
, V
= 0.5 I
G
= 2 W
DS
= 0
D25
GS
= 1 MW
DD
T
T
£ V
J
J
(T
DSS
J
= 125°C
= 25°C
= 25°C, unless otherwise specified)
JM
,
IXFH 80N085
IXFT 80N085
min.
2.0
85
-55 to +150
-55 to +150
Characteristic Values
1.13/10
Maximum Ratings
typ.
150
±20
±30
300
320
300
2.5
85
85
80
75
80
50
5
6
4
±100
max.
Nm/lb.in.
4.0
50
1
9
V/ns
mW
mJ
mA
°C
°C
°C
°C
W
nA
mA
V
V
V
V
V
V
A
A
A
A
J
g
g
G = Gate
V
I
R
t
TO-268 (IXFT) Case Style
S = Source TAB = Drain
Features
• International standard packages
• Low R
• Rated for unclamped Inductive load
• Molding epoxies meet UL 94 V-0
Advantages
• Easy to mount
• Space savings
• High power density
TO-247 AD (IXFH)
D25
rr
switching (UIS)
flammability classification
DSS
DS(on)
£ 200 ns
DS (on)
G
= 85 V
= 80 A
= 9 mW
D
S
= Drain
(TAB)
98709 (03/24/00)
(TAB)
1 - 2
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IXFT80N085 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 80N085 IXFT 80N085 Maximum Ratings ±20 ± 320 2.5 £ DSS ...
Page 2
... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 80N085 IXFT 80N085 TO-247 AD (IXFH) Outline ...