IXTK21N100 IXYS, IXTK21N100 Datasheet

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IXTK21N100

Manufacturer Part Number
IXTK21N100
Description
MOSFET N-CH 1000V 21A TO-264
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTK21N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4.5V @ 500µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
8400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK21N100
Manufacturer:
SHINDENG
Quantity:
5 000
High Voltage
MegaMOS
N-Channel, Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
GSS
D25
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
L
ISOL
DSS
GH(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
ISOL
J
J
C
C
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, Chip capability
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
1 mA
TM
GS
, I
FETs
D
D
DC
D
= 6 mA
= 500 A
DSS
, V
= 0.5 • I
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 M
T
T
J
J
(T
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
JM
Maximum Ratings
0.9/6
1000
1000
IXTK
1000
500
300
min.
IXTK 21N100
IXTN 21N100
20
30
21
84
10
Characteristic Values
-
-
-
-55 ... +150
-55 ... +150
2
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1000
1000
2500
3000
150
IXTN
520
20
30
21
84
30
max.
-
0.55
200
500
4.5
2
mA
V~
V~
nA
W
V
V
V
V
A
A
V
V
g
C
C
C
C
A
TO-264 AA (IXTK)
S
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
I
R
G
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
l
Advantages
l
l
l
miniBLOC, SOT-227 B
D25
International standard packages
JEDEC TO-264, epoxy meet UL 94 V-0
flammability classification
miniBLOC, (ISOTOP-compatible) with
Aluminium nitride isolation
Low R
Rugged polysilicon gate cell structure
Low package inductance
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
DS (on)
D
S
= 1000 V
= 21 A
= 0.55
G
HDMOS
D
S
D = Drain
TAB = Drain
G
TM
process
S
92808I(5/97)
D (TAB)
D
1 - 4
S

Related parts for IXTK21N100

IXTK21N100 Summary of contents

Page 1

... V DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTK 21N100 IXTN 21N100 Maximum Ratings IXTK IXTN 1000 1000 = 1 M 1000 1000 ...

Page 2

... D D25 100 0.25 0.15 0.24 0.05 Characteristic Values ( unless otherwise specified) J min. typ. JM 1000 = 100 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTK 21N100 IXTN 21N100 TO-264 AA Outline max Dim. ...

Page 3

... DS(on) 1 25°C J 1.4 1.3 1 10V GS 1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature -50 - Degrees C C © 2000 IXYS All rights reserved V = 10V 15V 75 100 125 150 IXTK 21N100 IXTN 21N100 Fig. 2 Input Admittance 25° Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance 2 ...

Page 4

... V - Volts SD Fig.10 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.0001 0.001 © 2000 IXYS All rights reserved 9000 8000 7000 6000 5000 4000 3000 2000 1000 200 250 300 = 25°C 1.0 1.2 1 Duty Cycle ...

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