FS70SM-2 Renesas Electronics America, FS70SM-2 Datasheet

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FS70SM-2

Manufacturer Part Number
FS70SM-2
Description
MOSFET N-CH 100V 70A TO-3P
Manufacturer
Renesas Electronics America
Datasheet

Specifications of FS70SM-2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
6540pF @ 10V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-3P
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS70SM-2
Manufacturer:
MIT
Quantity:
1 000
Part Number:
FS70SM-2
Manufacturer:
MITSUBISHI
Quantity:
12 500
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

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FS70SM-2 Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... FS70SM-2 High-Speed Switching Use Nch Power MOS FET Features Drive voltage : 100 V DSS DS(ON) (max Integrated Fast Recovery Diode (TYP.) : 120 ns Outline RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings ...

Page 4

... FS70SM-2 Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ...

Page 5

... FS70SM-2 Performance Curves Power Dissipation Derating Curve 200 160 120 100 Case Temperature Tc (°C) Output Characteristics (Typical 20V 10V 8V GS 100 Tc = 25°C Pulse Test 0.4 0.8 Drain-Source Voltage V On-State Voltage vs. Gate-Source Voltage (Typical) 2.0 1.6 1.2 0.8 0 Gate-Source Voltage V Rev.2.00 ...

Page 6

... FS70SM-2 Transfer Characteristics (Typical) 100 Gate-Source Voltage V Capacitance vs. Drain-Source Voltage (Typical) 2 Tch = 25° 1MHz Drain-Source Voltage V Gate-Source Voltage vs. Gate Charge (Typical) 20 Tch = 25° 70A 20V Gate Charge Qg (nC) Rev.2.00 Aug 07, 2006 page 25° 10V DS Pulse Test (V) GS Ciss Coss Crss (V) DS ...

Page 7

... FS70SM-2 On-State Resistance vs. Channel Temperature (Typical 10V 35A D 5 Pulse Test –1 10 – Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) 1 1mA D 1.2 1.0 0.8 0.6 0.4 – Channel Temperature Tch (°C) Switching Time Measurement Circuit Vin Monitor D.U.T. R GEN ...

Page 8

... Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page Previous Code MASS[Typ.]  PRSS0004ZB-A 4.8g 4.5 15.9Max 0.6 5.45 5.45 4 Quantity 20 Type name 30 Type name – Lead forming code 1.5 4.4 2.8 Standard order Standard order code code example FS70SM-2 FS70SM-2-A8 Unit: mm ...

Page 9

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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