BSS84LT1G ON Semiconductor, BSS84LT1G Datasheet - Page 9

• Manufacturer Part Number: BSS84LT1G
• Description: MOSFET P-CH 50V 130MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BSS84LT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Input Capacitance (ciss) @ Vds: 30pF @ 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 5 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.13 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS84LT1GOSTR

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Issue Date: 11 Jul 2008
Rev.07-02-06
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