NTR1P02LT3G ON Semiconductor, NTR1P02LT3G Datasheet

MOSFET P-CH 20V 1.3A SOT23-3

NTR1P02LT3G

Manufacturer Part Number
NTR1P02LT3G
Description
MOSFET P-CH 20V 1.3A SOT23-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTR1P02LT3G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
220 mOhm @ 750mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4V
Input Capacitance (ciss) @ Vds
225pF @ 5V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTR1P02LT3G
Manufacturer:
ONSemico
Quantity:
42 000
Part Number:
NTR1P02LT3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR1P02LT3G
Manufacturer:
ON/安森美
Quantity:
20 000
NTR1P02LT1
Power MOSFET
−20 V, −1.3 A, P−Channel
SOT−23 Package
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are DC−DC converters and power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 8
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Total Power Dissipation @ T
Operating and Storage Temperature Range
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Drain Current
These miniature surface mount MOSFETs low R
Low R
Miniature SOT−23 Surface Mount Package Saves Board Space
Pb−Free Packages are Available
Purposes, (1/8″ from case for 10 s)
− Continuous @ T
− Pulsed Drain Current (t
DS(on)
Provides Higher Efficiency and Extends Battery Life
Rating
A
= 25°C
(T
J
= 25°C unless otherwise noted)
A
p
= 25°C
≤ 10 ms)
Symbol
T
V
R
V
J
I
P
, T
T
DSS
DM
I
qJA
GS
D
D
L
stg
− 55 to
Value
DS(on)
−1.3
−4.0
−20
±12
400
150
300
260
1
assure
°C/W
Unit
mW
°C
°C
V
V
A
A
NTR1P02LT1G
NTR1P02LT3G
†For information on tape and reel specifications,
NTR1P02LT1
NTR1P02LT3
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
1
CASE 318
(BR)DSS
−20 V
STYLE 21
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
Device
SOT−23
upon manufacturing location.
2
P02
M
G
ORDERING INFORMATION
G
http://onsemi.com
3
(Pb−Free)
(Pb−Free)
= Specific Device Code
= Date Code*
= Pb−Free Package
Package
SOT−23
SOT−23
SOT−23
SOT−23
R
DS(on)
220 mW
MARKING DIAGRAM &
P−Channel
PIN ASSIGNMENT
Publication Order Number:
Gate
D
S
Max
1
10,000 Tape & Reel
10,000 Tape & Reel
P02 M G
3000 Tape & Reel
3000 Tape & Reel
Drain
3
G
Shipping
NTR1P02LT1/D
Source
2
I
−1.3 A
D
Max

Related parts for NTR1P02LT3G

NTR1P02LT3G Summary of contents

Page 1

... Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Device NTR1P02LT1 NTR1P02LT1G NTR1P02LT3 NTR1P02LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( −10 mA Zero Gate Voltage Drain Current (V = − − ...

Page 3

V = − −2 V −2 −2.6 V −2.4 V 1.5 −2 0.5 −1 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

4500 DS 4000 3500 3000 2500 2000 1500 1000 500 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 V = − ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

Related keywords