NTF3055-100T3G ON Semiconductor, NTF3055-100T3G Datasheet - Page 2

• Manufacturer Part Number: NTF3055-100T3G
• Description: MOSFET N-CH 60V 3A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF3055-100T3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 455pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Forward Transconductance Gfs (max / Min): 3.2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Final Product/Process Change Notification #16003
QUALIFICATION PLAN:
Deviec: PZT751T1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 8500 c
HTRB 150C, Bias=80% rated Vr, 1008 hrs
Device: SMBF1066T1
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 8500 c
HTRB 150C, Bias=80% rated Vr, 1008 hrs
Device: NIF9N05CLT1
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: NIF5003NT1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: NTF3055L08T1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: MCR08MT1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 504 hrs
TC Ta=-65/+150C, 500 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 7500 c
HTRB 150C, Bias=80% rated Vr, 504 hrs
ELECTRICAL CHARACTERISTIC SUMMARY:
No changes to electrical performance occurred.
CHANGED PART IDENTIFICATION:
Parts with date code of 721 or greater may be manufactured using the new BOM. Devices on
this notice will be rated at MSL1 260 at the expiration of this FPCN.
Issue Date: 02-Apr-2007
Rev.07-02-06
Results (Rej/SS)
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