NDF10N60ZG ON Semiconductor, NDF10N60ZG Datasheet

MOSFET N-CH 600V 10A TO-220FP

NDF10N60ZG

Manufacturer Part Number
NDF10N60ZG
Description
MOSFET N-CH 600V 10A TO-220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDF10N60ZG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
1425pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer:
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Quantity:
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NDF10N60Z, NDP10N60Z
N-Channel Power MOSFET
600 V, 0.65 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 3
Drain−to−Source Voltage
Continuous Drain Current,
Continuous Drain Current
Pulsed Drain Current,
Power Dissipation, R
Gate−to−Source Voltage
Single Pulse Avalanche
ESD (HBM)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T
Peak Diode Recovery
Continuous Source
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
Compliant
Low ON Resistance
Low Gate Charge
Zener Diode−protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
S
R
T
V
(Note 1)
Energy, L = 6.0 mH,
I
(JESD22−A114)
Current (Body Diode)
D
= 25°C) (Figure 13)
A
≤ 10 A, di/dt ≤ 200 A/ms, V
GS
qJC
= 10 A
= 100°C, R
@ 10 V
Rating
qJC
qJC
Symbol
T
DD
V
V
dv/dt
V
J
V
E
I
P
T
, T
DSS
DM
I
I
ISO
I
esd
GS
D
D
AS
S
= 80% BV
D
L
stg
(T
C
NDF10N60Z
= 25°C unless otherwise noted)
DSS
4500
36
5.7 (Note 2)
4.5 (Note 3)
10 (Note 2)
36 (Note 2)
−55 to 150
3900
600
±30
300
260
10
NDP10N60Z
125
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
NDF10N60ZG
NDP10N60ZG
Device
V
600 V
DSS
CASE 221D
CASE 221A
TO−220AB
TO−220FP
STYLE 1
STYLE 5
ORDERING INFORMATION
A
Y
WW
G
http://onsemi.com
TO−220FP
TO−220AB
Package
= Location Code
= Year
= Work Week
= Pb−Free Package
G (1)
R
DS(ON)
Publication Order Number:
Gate
NDF10N60ZG
NDP10N60ZG
0.65 Ω
MARKING
DIAGRAM
(TYP) @ 5 A
N−Channel
AYWW
Drain
In Development
D (2)
50 Units/Rail
or
NDF10N60Z/D
Shipping
Source
S (3)

Related parts for NDF10N60ZG

NDF10N60ZG Summary of contents

Page 1

... G (1) TO−220FP CASE 221D MARKING STYLE 1 DIAGRAM NDF10N60ZG or NDP10N60ZG AYWW Gate TO−220AB CASE 221A STYLE 5 Drain A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NDF10N60ZG TO−220FP 50 Units/Rail NDP10N60ZG TO−220AB In Development Publication Order Number: NDF10N60Z/D S (3) Source ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 4) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance ...

Page 3

T = 25° 7 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.80 0.75 0.70 0.65 0.60 5 ...

Page 4

C 1500 iss 1000 C rss 500 C oss 100 125 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = 300 ...

Page 5

... Figure 12. Thermal Impedance for NDF10N60Z Figure 13. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TYPICAL CHARACTERISTICS 0.001 ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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