NTP6413ANG ON Semiconductor, NTP6413ANG Datasheet

NTP6413ANG

Manufacturer Part Number

NTP6413ANG

Description

MOSFET N-CH 100V 42A TO-220AB

Manufacturer

ON Semiconductor

Datasheets

1.NTP6413ANG.pdf (7 pages)

2.NTP6413ANG.pdf (7 pages)

Specifications of NTP6413ANG

Package / Case

TO-220-3 (Straight Leads)

Mounting Type

Through Hole

Power - Max

136W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

51nC @ 10V

Vgs(th) (max) @ Id

4V @ 250µA

Current - Continuous Drain (id) @ 25° C

42A

Drain To Source Voltage (vdss)

100V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

28 mOhm @ 42A, 10V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTP6413ANG

Manufacturer:

Quantity:

550

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTP6413ANG

Manufacturer:

ON Semiconductor

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTP6413ANG

Manufacturer:

ON/安森美

Quantity:

20 000

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NTB6413AN, NTP6413AN

N-Channel Power MOSFET

100 V, 42 A, 28 mW

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

November, 2009 − Rev. 1

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Continuous Drain

Current R

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Range

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (V

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

L(pk)

Low R

High Current Capability

100% Avalanche Tested

These are Pb−Free Devices

qJC

(Cu Area 1.127 sq in [2 oz] including traces).

= 36.5 A, L = 0.3 mH, R

DS(on)

qJC

= 50 Vdc, V

Parameter

Steady

State

= 25°C Unless otherwise specified)

= 10 Vdc,

= 25 W)

= 10 ms

= 100°C

= 25°C

Symbol

DSS

, T

qJC

qJA

stg

−55 to

Value

$20

+175

Max

100

136

178

200

260

1.1

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Gate

(BR)DSS

100 V

6413ANG

AYWW

Drain

NTP

Drain

ORDERING INFORMATION

CASE 221A

TO−220AB

MARKING DIAGRAM

& PIN ASSIGNMENT

STYLE 5

http://onsemi.com

Source

28 mW @ 10 V

DS(ON)

6413AN = Specific Device Code

N−Channel

Publication Order Number:

= Pb−Free Device

= Assembly Location

= Year

= Work Week

MAX

Gate

6413ANG

CASE 418B

AYWW

Drain

STYLE 2

Drain

NTB

NTB6413AN/D

PAK

(Note 1)

42 A

MAX

Source

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