NTP35N15G ON Semiconductor, NTP35N15G Datasheet
NTP35N15G
Specifications of NTP35N15G
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NTP35N15G Summary of contents
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... W D 1.43 W/°C TO−220 CASE 221A −55 to °C J stg STYLE 5 +150 E 700 mJ AS °C/W R 0.7 qJC R 62.5 qJA T 260 °C L Device NTP35N15G 1 http://onsemi.com 37 AMPERES 150 VOLTS N−Channel MARKING DIAGRAM & PIN ASSIGNMENT D 35N15G AYWW Assembly Location Y = Year WW = Work Week G = Pb−Free Package ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Collector Current ( Vdc 150 Vdc 25° ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 40 ...
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SINGLE PULSE T = 25°C C 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...