IRF9630S Vishay, IRF9630S Datasheet - Page 3

• Manufacturer Part Number: IRF9630S
• Description: MOSFET P-CH 200V 6.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF9630S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9630S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91085
S09-0046-Rev. A, 19-Jan-09
91085_01
91085_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-1
1
0
1
0
10
10
-1
Top
Bottom
-1
Top
Bottom
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS
DS ,
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
- 4.5 V
C
- 4.5 V
C
= 150 °C
= 25 °C
91085_03
91085_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
1.5
3.0
2.5
2.0
1.0
0.5
0.0
1
0
Fig. 3 - Typical Transfer Characteristics
- 60 - 40 - 20 0
4
I
V
D
GS
= - 6.5 A
IRF9630S, SiHF9630S
25
= - 10 V
- V
5
T
°
GS ,
J ,
C
Junction Temperature (°C)
Gate-to-Source Voltage (V)
6
20 40 60 80 100 120 140 160
150
7
Vishay Siliconix
°
C
20 µs Pulse Width
V
8
DS
= -
50 V
www.vishay.com
9
10
3