IRFBC30AS Vishay, IRFBC30AS Datasheet
IRFBC30AS
Specifications of IRFBC30AS
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IRFBC30AS Summary of contents
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... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration PAK (TO-262) D PAK (TO-263 ORDERING INFORMATION 2 Package D PAK (TO-263) IRFBC30ASPbF Lead (Pb)-free SiHFBC30AS-E3 IRFBC30AS SnPb SiHFBC30AS Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ...
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... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 10 5.0V BOTTOM 4.5V 1 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5 ...
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... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 3. 480V 300V 120V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
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... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL 4.0 3.0 2.0 1.0 0 100 T , Case Temperature ( C) C Fig Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω ...
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... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 740 TOP 1.6A 2.3A BOTTOM 3.6A 720 700 680 660 640 ...
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... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL D.U. Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...