IRL620S Vishay, IRL620S Datasheet - Page 2

• Manufacturer Part Number: IRL620S
• Description: MOSFET N-CH 200V 5.2A D2PAK
• Manufacturer: Vishay

Specifications of IRL620S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL620S

IRL620S, SiHL620S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to Ambient (PCB
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
R
R
R
t
t
I
C
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
thJC
SM
t
thJA
thJA
I
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
r
f
D
S
rr
g
/T
J
T
Between lead,
6 mm (0.25") from
package and center
of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
V
R
GS
GS
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
GS
DS
T
g
J
Reference to 25 °C, I
= 4.0 V
= 5.0 V
= 9.0 , R
= 10 V
= 25 °C, I
= 320 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
TEST CONDITIONS
DS
DS
DS
GS
-
-
-
F
= 100 V, I
= V
= 200 V, V
= 50 V, I
= 0 V, I
V
= 5.2 A, dI/dt = 100 A/μs
V
GS
V
DS
S
D
GS
GS
GS
I
D
= 5.2 A, V
= ± 10 V
= 20, see fig. 10
= 25 V,
, I
= 5.2 A, V
= 0 V,
= 0 V, T
see fig. 6 and 13
D
D
D
= 250 μA
D
= 250 μA
= 3.1 A
GS
I
I
D
D
= 5.2 A,
= 3.1 A
= 2.6 A
D
= 0 V
GS
J
= 1 mA
G
G
DS
= 125 °C
b
= 0 V
= 160 V,
b
b
MAX.
D
S
D
S
b
2.5
b
b
62
40
b
MIN.
200
1.0
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2476-Rev. B, 01-Nov-10
Document Number: 91302
TYP.
0.27
360
180
4.2
4.5
7.5
1.1
91
27
31
18
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.80
250
270
2.0
1.0
2.9
9.6
5.2
1.8
1.7
25
16
21
S
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
V/°C
D
nA
μA
nC
nH
μC
pF
ns
ns

V
V
S
A
V
)