IRL640S Vishay, IRL640S Datasheet - Page 6

• Manufacturer Part Number: IRL640S
• Description: MOSFET N-CH 200V 17A D2PAK
• Manufacturer: Vishay

Specifications of IRL640S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 5V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL640S

IRL640S, SiHL640S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
5 V
p
Fig. 13a - Basic Gate Charge Waveform
V
to obtain
G
AS
R
Q
5 V
g
GS
V
DS
Charge
t
p
Q
Q
GD
G
I
AS
D.U.T.
0.01 W
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2554-Rev. B, 08-Nov-10
Document Number: 91306
D.U.T.
V
I
DS
D
V
+
-
DD
V
DS