IRFBE30S Vishay, IRFBE30S Datasheet
IRFBE30S
Specifications of IRFBE30S
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IRFBE30S Summary of contents
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... A, dI/dt ≤ 100 A/µs, V ≤ 600 1.6 mm from case containing terminations are not RoHS compliant, exemptions may apply Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Power MOSFET FEATURES • Dynamic dV/dt Rating 800 • Repetitive Avalanche Rated 3.0 78 • Fast Switching 9.6 • ...
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... IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...
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... IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91119 S-81432-Rev. A, 07-Jul-08 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L + Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
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... IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91119 S-81432-Rev ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91119. Document Number: 91119 S-81432-Rev. A, 07-Jul-08 IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...