IRL2203S Vishay, IRL2203S Datasheet - Page 2

• Manufacturer Part Number: IRL2203S
• Description: MOSFET N-CH 30V 100A D2PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRL2203S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics @ T
** When mounted on FR-4 board using minimum recommended footprint.
Source-Drain Ratings and Characteristics
Notes:
R
L
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
I
I
DSS
r
SM
d(on)
d(off)
f
S
rr
GSS
S
V
For recommended footprint and soldering techniques refer to application note #AN-994.
fs
DS(on)
(BR)DSS
GS(th)
SD
iss
oss
rss
R
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. ( See fig. 11 )
I
T
SD
DD
G
J
= 25 , I
= 15V, starting T
175°C
60A, di/dt 140A/µs, V
/ T
J
AS
Static Drain-to-Source On-Resistance
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
= 60A. (See Figure 12)
J
= 25°C, L = 220µH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
1.0
30
–––
–––
–––
47
–––
–––
Pulse width
Calculated continuous current based on maximum allowable
Uses IRL2203N data and test conditions.
package refer to Design Tip # 93-4
junction temperature; for recommended current-handling of the
0.035 –––
3500 –––
1400 –––
7.5
–––
–––
–––
–––
–––
––– -100
–––
–––
690
–––
–––
––– 0.007
–––
–––
–––
210
–––
280
15
29
54
94
100
0.01
–––
–––
100
–––
250
110
–––
–––
–––
–––
–––
400
140
410
2.5
1.3
25
31
57
300µs; duty cycle
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
A
V
V
S
V
V
V
V
V
V
V
ƒ = 1.0MHz, See Fig. 5
Reference to 25°C, I
V
V
V
V
V
V
I
I
R
R
Between lead,
and center of die contact
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 60A
= 60A
= 25°C, I
= 25°C, I
= 1.8
= 0.25
= 10V, I
= 4.5V, I
= 25V, I
= 0V, I
= V
= 30V, V
= 24V, V
= 20V
= -20V
= 24V
= 4.5V, See Fig. 6 and 13
= 15V
= 0V
= 25V
2%.
GS
, I
D
V
S
F
D
D
D
GS
D
See Fig. 10
Conditions
= 60A
= 250µA
= 60A, V
GS
GS
Conditions
= 60A
= 60A
= 250µA
= 50A
= 4.5V
= 0V
= 0V, T
D
GS
= 1mA
J
= 0V
= 150°C
G
D
S