IRFU4105ZTR Vishay, IRFU4105ZTR Datasheet - Page 4

• Manufacturer Part Number: IRFU4105ZTR
• Description: MOSFET N-CH 55V 30A I-PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFU4105ZTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 740pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
1000.0
100.0
1200
1000
10.0
800
600
400
200
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Ciss
Coss
Crss
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
1000
100
0.1
20
16
12
10
Fig 8. Maximum Safe Operating Area
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 18A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
5
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 44V
VDS= 28V
VDS= 11V
15
FOR TEST CIRCUIT
SEE FIGURE 13
100µsec
10msec
100
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1msec
20
25
1000
30