IRFP15N60LPBF Vishay, IRFP15N60LPBF Datasheet

MOSFET N-CH 600V 15A TO-247AC

IRFP15N60LPBF

Manufacturer Part Number
IRFP15N60LPBF
Description
MOSFET N-CH 600V 15A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP15N60LPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
460 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
2720pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
460mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
280W
Thermal Resistance
0.44°C/W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP15N60LPBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91204
S09-0008-Rev. B, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 15 A, dI/dt ≤ 340 A/µs, V
(Ω)
TO-247
J
= 25 °C, L = 2.9 mH, R
G
a
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
= 25 Ω, I
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
600
100
30
46
AS
= 15 A, dV/dt = 10 V/ns (see fig. 12a).
D
S
C
Power MOSFET
0.385
= 25 °C, unless otherwise noted
V
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP15N60LPbF
SiHFP15N60L-E3
IRFP15N60L
SiHFP15N60L
= 100 °C
= 25 °C
FEATURES
• Superfast Body Diode Eliminates the Need for
• Lower Gate Charge Results in Simple Drive
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
External Diodes in ZVS Applications
Requirements
Immunity
IRFP15N60L, SiHFP15N60L
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
- 55 to + 150
LIMIT
300
± 30
600
320
280
9.7
2.3
1.1
15
60
15
28
10
10
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

Related parts for IRFP15N60LPBF

IRFP15N60LPBF Summary of contents

Page 1

... Higher Gate Voltage Threshold Offers Improved Noise Immunity D • Lead (Pb)-free Available APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies S N-Channel MOSFET • Motor Control Applications TO-247 IRFP15N60LPbF SiHFP15N60L-E3 IRFP15N60L SiHFP15N60L = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRFP15N60L, SiHFP15N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... S09-0008-Rev. B, 19-Jan-09 IRFP15N60L, SiHFP15N60L 1000 100 5.0V 0.1 0.01 10 100 3.0 2.5 2.0 5.0V 1.5 1.0 0.5 0.0 10 100 Vishay Siliconix 150° 25° 50V 20μs PULSE WIDTH Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics 15A 10V -60 -40 - 100 120 140 160 Junction Temperature (° ...

Page 4

... IRFP15N60L, SiHFP15N60L Vishay Siliconix 100000 0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = iss 1000 C oss 100 C rss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 100 200 300 400 V DS, Drain-to-Source Voltage (V) Fig Typical Output Capacitance Stored Energy vs. V www.vishay.com 4 12.0 10.0 8 ...

Page 5

... OPERATION IN THIS AREA LIMITED (on) 100 10 100μsec 1msec 25° 150°C Single Pulse 10msec 0 100 1000 Drain-to-Source Voltage (V) Fig Maximum Safe Operating Area 125 150 Vishay Siliconix 10000 D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 11a - Switching Time Test Circuit V ...

Page 6

... IRFP15N60L, SiHFP15N60L Vishay Siliconix 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 5.0 4.5 4.0 3 250μA 3.0 2.5 2.0 -75 -50 - Temperature ( °C ) Fig Threshold Voltage vs. Temperature ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91204. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords