IRCZ44PBF Vishay, IRCZ44PBF Datasheet

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IRCZ44PBF

Manufacturer Part Number
IRCZ44PBF
Description
MOSFET N-CH 60V 50A TO-220-5
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRCZ44PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
28 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-5 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRCZ44PBF
l
l
l
l
l
l
HEXFET
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
dv/dt
T
T
DM
D
D
R
R
R
AS
J
STG
D
GS
@ T
@ T
Dynamic dv/dt Rating
Current Sense
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
@T
CS
JA
JC
C
C
C
= 25°C
= 100°C
= 25°C
®
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Power MOSFET
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Soldering Temperature, for 10 seconds
Parameter
GS
GS
@ 10V
@ 10V
Min.
300 (1.6mm from case)
Typ.
0.50
10 lbf•in (1.1 N•m)
-55 to + 175
Max.
210
150
±20
50*
1.0
4.5
37
30
Max.
R
1.0
62
TO-220 HexSense
DS(on)
IRCZ44
V
I
DSS
D
= 50*A
= 0.028
PD - 9.529B
= 60V
Units
Units
°C/W
W/°C
V/ns
mJ
W
°C
A
V
C-13

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IRCZ44PBF Summary of contents

Page 1

HEXFET Power MOSFET Dynamic dv/dt Rating l l Current Sense 175°C Operating Temperature l Fast Switching l l Ease of Paralleling Simple Drive Requirements l Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination ...

Page 2

IRCZ44 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

V , Drain-to-Source Voltage (Volts) DS Fig. 1 Typical Output Characteristics, T =25° Gate-to-Source Voltage (Volts) DS Fig. 3 Typical Transfer Characteristics IRCZ44 V , Drain-to-Source Voltage (Volts) DS Fig. 2 Typical Output Characteristics, T =175°C C ...

Page 4

IRCZ44 V , Drain-to-Source Voltage (Volts) DS Fig. 5 Typical Capacitance vs. Drain-to- Source Voltage V , Source-to-Drain Voltage (Volts) SD Fig. 7 Typical Source-Drain Diode Forward Voltage C- Total Gate Charge (nC) G Fig. 6 Typical Gate ...

Page 5

T , Case Temperature (°C) C Fig. 9 Maximum Drain Current vs. Case Temperature t , Rectiangular Pulse Duration (seconds) 1 Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case IRCZ44 Starting T , Junction Temperature (°C) J Fig. 12c Maximum ...

Page 6

IRCZ44 T , Junction Temperature (°C) J Fig. 15 Typical HEXSense Ratio vs. Junction Temperature V , Gate-to-Source Voltage (Volts) GS Fig. 17 Typical HEXSense Ratio vs. Gate Voltage Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit ...

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