ZVN4306AVSTOA Diodes Zetex, ZVN4306AVSTOA Datasheet - Page 2

• Manufacturer Part Number: ZVN4306AVSTOA
• Description: MOSFET N-CHAN 60V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN4306AVSTOA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 330 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 850mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
ZVN4306AV
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
60
1.3
12
700
source impedance and <5ns rise time on a pulse generator
TYP.
0.22
0.32
amb
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
100
10
100
0.33
0.45
350
140
30
8
25
30
16
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
= 20V, V
=60V, V
=48V, V
=10V, V
=10V,I
=5V, I
=25V,I
=25 V, V
25V, V
D
D
D
GS
DS
=1.5A
=3A
=3A
GS
GS
GS
GEN
GS
= V
=0V
DS
=0
=0V, T=125°C
=10V
=0V, f=1MHz
=10V, I
=0V
GS
D
=3A
(2)