IRFP140N International Rectifier, IRFP140N Datasheet

MOSFET N-CH 100V 33A TO-247AC

IRFP140N

Manufacturer Part Number
IRFP140N
Description
MOSFET N-CH 100V 33A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP140N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
52 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP140N

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP140N
Manufacturer:
FAIRCHILD
Quantity:
1 050
Part Number:
IRFP140N
Manufacturer:
ST
0
Part Number:
IRFP140N
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP140NPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP140NPBF
Quantity:
9 000
Company:
Part Number:
IRFP140NPBF
Quantity:
5 000
HEXFET
Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
STG
D
GS
AS
AR
J
@ T
@ T
JC
CS
JA
@T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
C
C
C
= 25°C
= 100°C
= 25°C
®
Power MOSFET
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Min.
––––
––––
––––
300 (1.6mm from case)
10 lbf•in (1.1N•m)
-55 to + 175
S
D
––––
Typ.
––––
0.24
Max.
0.91
TO-247AC
110
140
±20
300
5.0
33
23
16
14
IRFP140N
R
DS(on)
V
Max.
––––
1.1
40
DSS
I
D
= 33A
PD - 91343B
= 0.052
= 100V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
10/5/98
1

Related parts for IRFP140N

IRFP140N Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G @ 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– 91343B IRFP140N 100V DSS R = 0.052 DS(on 33A D S TO-247AC Max. Units ...

Page 2

... IRFP140N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... D rain-to-S ourc e Voltage ( Fig 1. Typical Output Characteristics ° ° 0µ ate-to -So urce Voltag e ( Fig 3. Typical Transfer Characteristics www.irf.com IRFP140N VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. 4 0µ 5° 0 rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics 3 2.5 2 ...

Page 4

... IRFP140N iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° 5° 0.4 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 1.6 2 FIG otal G ate C harge ( Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ITE µ µ ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 10% ° Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP140N D.U. 10V µ d(on) r d(off) f ...

Page 6

... IRFP140N V DS D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 0. (BR)DSS TTO tarting unc tion T em perature (° Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. ...

Page 7

... Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = Period Waveform Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% Fig 14. For N-Channel HEXFETS IRFP140N + + P.W. V =10V * ...

Page 8

... IRFP140N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 1 5.90 (. 5.30 (. .30 (.800) 19 .70 (.775 14.8 0 (.5 83) 14.2 0 (.5 59) 2.40 (.09 4) 2.00 (. 5.45 (.2 15) 3 .40 (.133 ) 2X 3 .00 (.118 ) Part Marking Information TO-247AC WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR FAR EAST: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords