IRL2203NS International Rectifier, IRL2203NS Datasheet - Page 4

• Manufacturer Part Number: IRL2203NS
• Description: MOSFET N-CH 30V 116A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL2203NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL2203NS

4
1000
6000
5000
4000
3000
2000
1000
100
0.1
10
1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
T = 175 C
Drain-to-Source Voltage
J
V
0.4
V
SD
DS
Forward Voltage
°
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
T = 25 C
=
=
=
=
J
0V,
C
C
C
gs
gd
ds
C rss
C iss
C oss
1.2
+ C
+ C
°
10
f = 1MHz
gd ,
gd
1.6
C
ds
V
SHORTED
GS
2.0
= 0 V
2.4
100
10000
1000
100
15
12
10
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Tc = 25°C
Tj = 175°C
Single Pulse
60A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
DS
DS
40
10
= 24V
= 15V
FOR TEST CIRCUIT
SEE FIGURE
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60
100µsec
1msec
10msec
13
100
80