IRL520NS International Rectifier, IRL520NS Datasheet - Page 4

• Manufacturer Part Number: IRL520NS
• Description: MOSFET N-CH 100V 10A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL520NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL520NS

IRL520NS/L
1 0 0
0.1
1 0
8 0 0
6 0 0
4 0 0
2 0 0
1
0.4
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
C
C
C
V
T = 1 75 °C
rss
V
J
iss
oss
S D
0.6
D S
Drain-to-Source Voltage
, S ourc e-to-D rain V oltage (V )
V
C
C
C
, D rain-to-S ourc e V oltage (V )
G S
iss
rs s
o ss
Forward Voltage
= 0V ,
= C
= C
= C
0.8
g s
g d
ds
T = 25 °C
+ C
+ C
1 0
J
g d
g d
f = 1 M H z
1.0
, C
d s
S H O R TE D
1.2
V
G S
= 0 V
1.4
1 0 0
A
A
1 0 0
0.1
1 5
1 2
1 0
9
6
3
0
1
0
Fig 8. Maximum Safe Operating Area
1
Fig 6. Typical Gate Charge Vs.
I
T
T
S ing le P u lse
D
C
J
= 6.0 A
= 25 °C
= 17 5°C
O P E R A T IO N IN T H IS A R E A L IM ITE D
V
Gate-to-Source Voltage
D S
Q , T otal G ate C harge (nC )
5
G
, D rain-to-S ource V oltage (V )
1 0
1 0
B Y R
V
V
V
D S
D S
D S
D S (o n)
= 80 V
= 50 V
= 20 V
F O R TE S T C IR C U IT
1 5
S E E F IG U R E 1 3
1 0 0
1 0 µ s
1 0 0 µ s
1 m s
1 0 m s
2 0
1 0 0 0
2 5
A
A