IRLR3103TR International Rectifier, IRLR3103TR Datasheet
IRLR3103TR
Specifications of IRLR3103TR
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IRLR3103TR Summary of contents
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... Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
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IRLR/U3103 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2. rain-to-S ource V oltage ( Fig 1. Typical Output Characteristics ...
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IRLR/U3103 3200 2800 oss ds iss 2400 C 2000 1600 1200 ...
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LIMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 ...
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IRLR/U3103 10V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
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D.U Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low ...
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IRLR/U3103 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 ...
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Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.52 (.060) 1.15 (.045 2.28 (.090) 1.91 (.075) 1.14 (.045) 3X 0.76 ...
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IRLR/U3103 Tape & Reel Information TO-252AA ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...