IRF5305STRR International Rectifier, IRF5305STRR Datasheet

IRF5305STRR

Manufacturer Part Number

IRF5305STRR

Description

MOSFET P-CH 55V 31A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF5305S.pdf (11 pages)

Specifications of IRF5305STRR

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

60 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

31A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 10V

Input Capacitance (ciss) @ Vds

1200pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

Q971401A

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF5305STRRPBF

Manufacturer:

Quantity:

23 000

Current page: 1 of 11
Download datasheet (177Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF5305L) is available for low-

profile applications.

dv/dt

STG

Pak is suitable for high current applications because of

@ T

Advanced Process Technology

Surface Mount (IRF5305S)

Low-profile through-hole (IRF5305L)

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

on-resistance per silicon area.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

@ -10V

This

300 (1.6mm from case )

Typ.

–––

D P ak

HEXFET

-55 to + 175

IRF5305S/L

Max.

-110

0.71

-5.8

110

± 20

280

-31

-22

-16

3.8

T O -26 2

Power MOSFET

DS(on)

Max.

1.4

DSS

= -31A

PD - 91386C

= -55V

= 0.06

Units

W/°C

V/ns

°C/W

°C

4/1/99

Related parts for IRF5305STRR

IRF5305STRR Summary of contents

Page 1

... Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...

Page 2

IRF5305S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF5305STRR International Rectifier, IRF5305STRR Datasheet

IRF5305STRR

Specifications of IRF5305STRR

Available stocks

Related parts for IRF5305STRR

IRF5305STRR Summary of contents

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