IRFS33N15D International Rectifier, IRFS33N15D Datasheet - Page 5

• Manufacturer Part Number: IRFS33N15D
• Description: MOSFET N-CH 150V 33A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS33N15D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 2020pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFS33N15D

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0.01
35
30
25
20
15
10
0.1
5
0
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
IRFB/IRFS/IRFSL33N15D
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
10V
V
GS
t
r
V
J
DS
µs
DM
x Z
1
0.1
thJC
D.U.T.
P
2
DM
t
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
DD
5
1