IRFU9024N International Rectifier, IRFU9024N Datasheet - Page 3

• Manufacturer Part Number: IRFU9024N
• Description: MOSFET P-CH 55V 11A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU9024N

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFU9024N

100
0.1
10
100
Fig 1. Typical Output Characteristics
0.1
1
10
0.1
Fig 3. Typical Transfer Characteristics
1
4
TOP
BOTTOM
-V
-V
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
5
GS
, Drain-to-Source Voltage (V)
T = 25 C
J
, Gate-to-Source Voltage (V)
1
6
°
-4.5V
7
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
8
= -25V
T = 150 C
°
J
9
°
100
10
100
Fig 2. Typical Output Characteristics
0.1
10
1
2.5
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
-V
-11A
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
T , Junction Temperature( C)
, Drain-to-Source Voltage (V)
J
IRFR/U9024N
Vs. Temperature
0
1
20
40
-4.5V
60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-10V
100