IRLMS2002 International Rectifier, IRLMS2002 Datasheet - Page 3

• Manufacturer Part Number: IRLMS2002
• Description: MOSFET N-CH 20V 6.5A TSOP-6
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLMS2002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 1310pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
100
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
1.5
0.1
TOP
BOTTOM
V
V
DS
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
GS
T = 25 C
J
2.0
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
1
1.50V
2.5
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
T = 150 C
DS
J
J
10
= 15V
3.0
°
°
3.5
100
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
5.3A
V
DS
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.50V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
1.50V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
4.5V
3
100