IRF7459 International Rectifier, IRF7459 Datasheet - Page 4

• Manufacturer Part Number: IRF7459
• Description: MOSFET N-CH 20V 12A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7459

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2480pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7459

IRF7459
4
4000
3200
2400
1600
800
1000
100
0.1
0
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
T = 150 C
J
V
V
DS
SD
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
°
0.8
GS
iss
rss
oss
,Source-to-Drain Voltage (V)
=
=
=
=
T = 25 C
C oss
C rss
0V,
C
C
C
C iss
J
gs
gd
ds
+ C
+ C
10
1.4
°
f = 1MHz
gd ,
gd
C
ds
2.0
SHORTED
V
GS
= 0 V
100
2.6
1000
100
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
A
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
9.6A
Gate-to-Source Voltage
V
DS
10
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
DS(on)
V
DS
30
= 10V
10
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10us
100us
1ms
10ms
40
100
50