IRFL024N International Rectifier, IRFL024N Datasheet

MOSFET N-CH 55V 2.8A SOT223

IRFL024N

Manufacturer Part Number
IRFL024N
Description
MOSFET N-CH 55V 2.8A SOT223
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFL024N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18.3nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFL024N

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFL024N
Manufacturer:
IR
Quantity:
592
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IRFL024N
Manufacturer:
UC
Quantity:
6 217
Part Number:
IRFL024NTRPBF
Manufacturer:
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Part Number:
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Quantity:
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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
I
I
I
I
P
P
V
E
I
E
dv/dt
T
R
R
D
D
D
DM
AR
J,
D
D
GS
AS
AR
@ T
@ T
@ T
JA
JA
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
@T
@T
T
STG
A
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Parameter
Parameter
GS
GS
GS
@ 10V**
@ 10V*
@ 10V*
G
Typ.
90
50
HEXFET
-55 to + 150
D
S
S O T -2 2 3
Max.
11.2
± 20
214
2.8
4.0
2.8
2.3
2.1
1.0
8.3
5.0
0.1
IRFL024N
®
R
Max.
DS(on)
Power MOSFET
120
60
V
I
DSS
D
= 2.8A
PD - 91861A
= 0.075
= 55V
Units
mW/°C
Units
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
1
6/15/99

Related parts for IRFL024N

IRFL024N Summary of contents

Page 1

... When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com HEXFET 10V 10V 10V 150 Typ 91861A IRFL024N ® Power MOSFET V = 55V DSS R = 0.075 DS(on 2. Max. Units 4.0 2 ...

Page 2

... IRFL024N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 10 1 ° 0.1 10 100 0.1 Fig 2. Typical Output Characteristics, 2 1.5 1.0 0.5 = 25V 0.0 6.0 6.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRFL024N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 2.8A ...

Page 4

... IRFL024N 700 1MHz iss 600 rss oss iss 500 C oss 400 300 200 C rss 100 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 1 ° 150 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRFL024N D.U. µ d(off thJC C ...

Page 6

... IRFL024N 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 6 500 1 5V 400 300 + 200 - A 100 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy TOP 1.3A 2.2A BOTTOM 2. 100 125 150 ° J Vs. Drain Current www.irf.com ...

Page 7

... Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO www.irf.com IRFL024N ...

Page 8

... IRFL024N Tape & Reel Information SOT-223 Outline (. (. (. (. & (. (. 330.00 (13.000 LIN WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

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