IRF530NL International Rectifier, IRF530NL Datasheet

IRF530NL

Manufacturer Part Number

IRF530NL

Description

MOSFET N-CH 100V 17A TO-262

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF530NS.pdf (11 pages)

Specifications of IRF530NL

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

90 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

17A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

37nC @ 10V

Input Capacitance (ciss) @ Vds

920pF @ 25V

Power - Max

3.8W

Mounting Type

Through Hole

Package / Case

TO-262-3 (Straight Leads)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF530NL

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF530NL

Manufacturer:

Quantity:

12 500

Current page: 1 of 11
Download datasheet (614Kb)

Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF530NL) is available for low-profile applications.

Description

www.irf.com

dv/dt

STG

θJC

θJA

Pak is suitable for high current applications because of its low internal

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of accommodating

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mounted,steady-state)**

Power MOSFETs from International Rectifier

Parameter

‡

ƒ‡

@ 10V

‡

Typ.

300 (1.6mm from case )

–––

HEXFET

-55 to + 175

IRF530NS

Max.

0.47

± 20

3.8

9.0

7.0

7.4

Pak

Power MOSFET

IRF530NS

IRF530NL

DS(on)

Max.

2.15

DSS

= 17A

IRF530NL

PD - 91352B

= 100V

TO-262

= 90mΩ

Units

°C/W

W/°C

V/ns

°C

Related parts for IRF530NL

IRF530NL Summary of contents

Page 1

... The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. Absolute Maximum Ratings Parameter 25°C ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...

Page 4

1MHz iss rss oss ds gd 1200 C iss 800 C oss 400 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 0.1 (THERMAL RESPONSE) ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 200 160 DRIVER 120 + ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

www.irf.com ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 9 ...

Page 10

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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