IRFZ48NL International Rectifier, IRFZ48NL Datasheet - Page 4

• Manufacturer Part Number: IRFZ48NL
• Description: MOSFET N-CH 55V 64A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ48NL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 1970pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ48NL

IRFZ48NS/IRFZ48NL
4
1000
100
3500
3000
2500
2000
1500
1000
0.1
Fig 5. Typical Capacitance Vs.
10
500
Fig 7. Typical Source-Drain Diode
1
0.2
0
1
Drain-to-Source Voltage
T = 175 C
J
V
V
SD
Forward Voltage
DS
0.7

,Source-to-Drain Voltage (V)
°
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
=
=
=
=
J
0V,
C
C
C
gs
gd
ds
1.2
C oss
C rss
+ C
+ C
C iss
°
10
f = 1MHz
gd ,
gd
C
ds
1.7
V
GS
SHORTED
= 0 V
2.2
100
1000
100
Fig 8. Maximum Safe Operating Area
0.1
20
16
12
10
8
4
0
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
32A
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
V
40
DS
DS
DS
10
= 44V
= 27V
= 11V
FOR TEST CIRCUIT
SEE FIGURE
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60
100µsec
10msec
1msec
13
100
80