IRL540NL International Rectifier, IRL540NL Datasheet - Page 4

• Manufacturer Part Number: IRL540NL
• Description: MOSFET N-CH 100V 36A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL540NL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL540NL

IRL540NS/L
1 0 0 0
1 0 0
3 0 0 0
2 0 0 0
1 0 0 0
1 0
1
0.4
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.6
Drain-to-Source Voltage
V
V
T = 175°C
S D
J
D S
C
C
C
, Source-to-Drain Voltage (V)
V
C
C
C
rss
iss
oss
, Drain-to-Source Voltage (V)
0.8
Forward Voltage
G S
iss
rss
oss
= 0V,
= C
= C
= C
T = 25°C
J
1.0
gs
ds
gd
+ C
+ C
1 0
f = 1MHz
1.2
gd
gd
, C
1.4
SHORTED
ds
V
G S
1.6
= 0V
1.8
1 0 0
A
A
1 0 0 0
1 0 0
1 5
1 2
1 0
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
1
I
T
T
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
C
J
= 18A
= 25°C
= 175°C
O P E R A T I O N I N T H I S A R E A L I M I T E D
Gate-to-Source Voltage
V
2 0
Q , Total Gate Charge (nC)
D S
G
, Drain-to-Source Voltage (V)
1 0
4 0
BY R
V
V
V
D S
D S
D S
D S ( o n )
= 80V
= 50V
= 20V
FOR TEST CIRCUIT
6 0
SEE FIGURE 13
1 0 0
1 0 0 µ s
1 0 m s
1 0 µ s
1 m s
8 0
1 0 0 0
1 0 0
A
A