IRL3103D2 International Rectifier, IRL3103D2 Datasheet - Page 2

• Manufacturer Part Number: IRL3103D2
• Description: MOSFET N-CH 30V 54A TO-220AB
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRL3103D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2300pF @ 25V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRL3103D2
MOSFET Electrical Characteristics @ T
Body Diode & Schottky Diode Ratings and Characteristics
Notes:
R
L
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
C
I
L
I
I
V
V
t
Q
t
DSS
d(on)
d(off)
GSS
r
f
SM
on
F
rr
D
V
fs
DS(on)
S
(BR)DSS
GS(th)
iss
oss
rss
iss
g
gs
gd
SD1
SD2
rr
Repetitive rating; pulse width limited by
Uses IRL3103 data and test conditions
(BR)DSS
(AV)
Pulse width
max. junction temperature. ( See fig. 10 )
/ T
J
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Internal Source Inductance
( Schottky)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
300µs; duty cycle
Parameter
Parameter
2%.
–––
––– 0.037 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
30
23
–––
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25°C (unless otherwise specified)
2300 –––
1100 –––
3500 –––
4.5
–––
–––
––– 0.014
––– 0.019
–––
–––
––– 0.25
–––
–––
––– -100
–––
–––
–––
210
7.5
310
9.0
–––
–––
–––
20
54
47
51
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
35
44
14
24
5.0
1.3
0.6
220
77
71
V/°C
nH
mA
nA
nC
ns
nC
pF
ns
V
V
S
A
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
V
R
V
MOSFET symbol
showing the
integral reverse
p-n junction and Schottky diode.
T
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
GS
G
D
J
J
J
= 32A
= 34A
= 25°C, I
= 25°C, I
= 25°C, I
= 3.4
= 0.43
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6
= 15V
= 0V
= 0V, V
GS
, I
D
V
F
S
S
D
D
D
DS
Conditions
= 250µA
D
GS
GS
GS
= 32A
Conditions
= 32A, V
= 3.0A, V
= 250µA
= 34A
= 32A
= 27A
= 0V
=4.5V
= 0V
= 0V, T
D
= 1mA
GS
GS
J
= 125°C
= 0V
= 0V
G
G
S
+L
S
D
D
S
D
)