IRLR8103 International Rectifier, IRLR8103 Datasheet

MOSFET N-CH 30V 89A D-PAK

IRLR8103

Manufacturer Part Number
IRLR8103
Description
MOSFET N-CH 30V 89A D-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR8103

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
89A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 5V
Power - Max
89W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
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IRLR8103
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IR
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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
Description
These new devices employ advanced HEXFET
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRLR8103 and IRLR8503 have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
and Cdv/dt-induced turn-on immunity. The IRLR8103 offers
particulary low R
synchronous FET applications. The IRLR8503 offers an
extremely low combination of Q
losses in control FET applications.
The package is designed for vapor phase, infrared,
convection, or wave soldering techniques. Power
dissipation of greater than 80W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Parameter
Maximum Junction-to-Ambient PCBƒ
Maximum Junction-to-Case
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
applications
GS
10V)
DS(on)
and high Cdv/dt immunity for
sw
& R
T
T
T
T
A
A
L
L
= 25°C
= 90°C
= 25°C
= 90°C
DS(on)
DS(on)
, gate charge
for reduced
®
power
Revised 1/13/00
Symbol
T
R
R
J
V
V
, T
I
P
I
HEXFET
I
DM
I
SM
DS
GS
D
S
D
JC
JA
STG
G
IRLR8103/IRLR8503
IRLR8103/IRLR8503
®
IRLR8103
V
R
Q
Q
Q
Chipset for DC-DC Converters
89…
61…
DS
DS
G
350
350
sw
oss
89…
1.4
89
42
(on)
DEVICE RATINGS (typ.)
–55 to 150
Max.
±20
50
30
S
D
IRLR8103
20.3 nC
6 m
45 nC
23 nC
30V
IRLR8503
49…
49…
Provisional Data Sheet
196
196
34…
2.0
62
30
IRLR8503
D-Pak
12 m
5.4 nC
15 nC
23 nC
30V
PD - 93838
PD - 93839
Units
Units
°C/W
°C/W
°C
W
V
A
A
1

Related parts for IRLR8103

IRLR8103 Summary of contents

Page 1

... DC-DC converters that power the latest generation of microprocessors. Both the IRLR8103 and IRLR8503 have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including R and Cdv/dt-induced turn-on immunity. The IRLR8103 offers ...

Page 2

... Charge (with Parallel Schottky)„ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width 300 µs; duty cycle 2%. ƒ When mounted on 1 inch square copper board, t < 10 sec. 2 IRLR8103 IRLR8503 Min Typ Max Min Typ Max Units 30 – – 30 – ...

Page 3

... Part Marking Information TO-252AA (D-PARK www.irf.com IRLR8103/IRLR8503 2.38 (.094) 2.19 (.086) 1.27 (.050) 0.88 (.035) 6.22 (.245) 10.42 (.410) 5.97 (.235) 9.40 (.370 0.89 (.035) 0.64 (.025) 0.25 (.010 & ...

Page 4

... IRLR8103/IRLR8503 Tape & Reel Information TO-252AA ILL ILL & - WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

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