IRF5800 International Rectifier, IRF5800 Datasheet - Page 4

• Manufacturer Part Number: IRF5800
• Description: MOSFET P-CH 30V 4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5800

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
100
0.1
10
800
600
400
200
1
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
Drain-to-Source Voltage
J
-V
-V
SD
DS
0.8
Forward Voltage
°
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C rss
C oss
=
=
=
=
C iss
0V,
C
C
C
T = 25 C
gs
gd
ds
J
1.2
+ C
+ C
10
f = 1MHz
gd ,
gd
°
C
ds
1.6
SHORTED
V
GS
= 0 V
100
2.0
1000
100
0.1
10
20
16
12
1
Fig 8. Maximum Safe Operating Area
8
4
0
1
0
T
T
Single Pulse
I =
Fig 6. Typical Gate Charge Vs.
D
C
J
= 25 C
= 150 C
-4.0A
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
4
°
G
, Drain-to-Source Voltage (V)
8
BY R
10
DS(on)
FOR TEST CIRCUIT
12
SEE FIGURE
V
DS
www.irf.com
=-16V
10us
100us
1ms
10ms
16
13
20
100