IRL1404S International Rectifier, IRL1404S Datasheet - Page 2

• Manufacturer Part Number: IRL1404S
• Description: MOSFET N-CH 40V 160A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1404S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 5V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL1404S

IRL1404S/IRL1404L
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
I
L
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
V
D
2
fs
S
(BR)DSS
GS(th)
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
SD
rr
(BR)DSS
eff.
/ T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Parameter
Parameter
J
= 25°C (unless otherwise specified)
––– 0.038 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
40
93
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
6600 –––
1700 –––
6700 –––
1500 –––
1500 –––
–––
––– 0.004
–––
–––
–––
–––
–––
––– -200
–––
–––
–––
270
130
350
–––
–––
–––
170
18
38
63
4.5
7.5
0.0059
160†
–––
–––
250
200
140
–––
–––
–––
–––
–––
–––
–––
250
3.0
1.3
20
48
60
640
94
V/°C
nC
nH
µA
nA
ns
pF
nC
ns
V
V
S
A
V
V
Reference to 25°C,
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
GS
GS
GS
J
J
G
D
= 95A
= 95A
= 25°C, I
= 25°C, I
= 0.25
= 2.5
= 0V, I
= 10V, I
= 4.3V, I
= V
= 25V, I
= 40V, V
= 32V, V
= 20V
= -20V
= 32V
= 5.0V, See Fig. 6 „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
= 20V
GS
, I
D
S
F
„
DS
D
D
D
DS
DS
Conditions
D
= 250µA
Conditions
GS
GS
= 95A, V
= 95A
= 250µA
= 95A
V
= 95A „
= 40A „
= 0V to 32V
GS
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
= 4.5V
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V „
G
G
S
+L
S
D
D
D
S
)