IRF7726 International Rectifier, IRF7726 Datasheet - Page 4

• Manufacturer Part Number: IRF7726
• Description: MOSFET P-CH 30V 7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7726

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 2204pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7726

IRF7726
4
3200
2800
2400
2000
1600
1200
100
800
400
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.0
1
Drain-to-Source Voltage
-V

T = 25 C
-V
J
SD
DS
Forward Voltage

1.5
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°

C
C
C
iss

oss

rss
=
=
=
=
0V,
C
C
C
gs
gd
ds
3.0
+ C
+ C
10

f = 1MHz
T = 150 C
gd ,
gd
J
C
ds

4.5
°
V
SHORTED
GS
= 0 V
6.0
100
100
16
14
12
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0

I =
Fig 6. Typical Gate Charge Vs.

D
T
T
Single Pulse
C
J
= 25 C °
= 150 C

-7.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
10
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)

V
V
DS
DS
www.irf.com
40
10
=-24V
=-15V
50

1 00us

1 ms

1 0ms
100
60