IRFPS3810 International Rectifier, IRFPS3810 Datasheet
IRFPS3810
Specifications of IRFPS3810
Q1244033
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IRFPS3810 Summary of contents
Page 1
... J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com IRFPS3810 HEXFET Max. @ 10V 170† 10V 120† GS 1350 - 175 300 (1.6mm from case ) Typ. ––– 0.24 – ...
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... IRFPS3810 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFPS3810 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 5.0V 50µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 170A V = 10V ...
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... IRFPS3810 15000 0V, C iss = rss = oss = 10000 Ciss 5000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 ° 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ SHORTED 100 0 0 Fig 6. Typical Gate Charge Vs. ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRFPS3810 D.U. µ d(off ...
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... IRFPS3810 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 3000 2500 2000 + 1500 1000 500 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP ...
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... Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRFPS3810 + =10V ...
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... IRFPS3810 Super-247™ Package Outline 16.10 [.632] A 3.00 [.118] 15.10 [.595 2.00 [.079] 20.80 [.818] 19.80 [.780 14.80 [.582] 4.25 [.167] 13.80 [.544] 3.85 [.152] 1.60 [.062] 3X 1.45 [.058] 5.45 [.215] 2X 0.25 [.010] IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 0 ...