IRF7476 International Rectifier, IRF7476 Datasheet - Page 3

• Manufacturer Part Number: IRF7476
• Description: MOSFET N-CH 12V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7476

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.9V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2550pF @ 6V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7476; Q1332195

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1000.00
100.00
10.00
0.001
1000
Fig 3. Typical Transfer Characteristics
1.00
0.10
0.01
Fig 1. Typical Output Characteristics
100
0.1
10
1
1.5
0.1
T J = 150°C
T J = 25°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
1
2.5
1.5V
20µs PULSE WIDTH
Tj = 25°C
V DS = 10V
20µs PULSE WIDTH
3.0
10
BOTTOM 1.5V
TOP
3.5
4.5V
3.5V
2.7V
2.0V
V
10V
5.0V
8.0V
GS
100
4.0
1000
0.01
100
0.1
10
Fig 2. Typical Output Characteristics
1
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60

I
D
=
-40
15A
V DS , Drain-to-Source Voltage (V)
T
-20
j
, Junction Temperature (°C)
Vs. Temperature
0
1
20
40
1.5V
20µs PULSE WIDTH
Tj = 150°C
60
IRF7476
80
10
100

BOTTOM 1.5V
TOP
V
120
GS
=
4.5V
3.5V
2.7V
2.0V
140
V
10V
5.0V
4.5V
8.0V
GS
3
100
160