IRF3205Z International Rectifier, IRF3205Z Datasheet - Page 3

• Manufacturer Part Number: IRF3205Z
• Description: MOSFET N-CH 55V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3205Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3450pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3205Z

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1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1000
100
100
10
10
1
1
0.1
4.0
5.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
6.0
1
T J = 25°C
4.5V 20µs PULSE WIDTH
7.0
V DS = 25V
20µs PULSE WIDTH
Tj = 25°C
8.0
10
T J = 175°C
9.0
10.0
100
11.0
1000
100
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
120
100
80
60
40
20
0.1
0
0
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
20
Vs. Drain Current
1
4.5V
40
V DS = 10V
20µs PULSE WIDTH
T J = 175°C
20µs PULSE WIDTH
Tj = 175°C
60
10
T J = 25°C
80
3
100
100